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Dopant-induced bandgap shift in Al-doped ZnO thin films prepared by spray pyrolysis

Abstract:

A series of 1 at. Al-doped ZnO (AZO) films were deposited onto glass substrates by a spray pyrolysis technique. We find that the observed blue shift in the optical bandgap of 1 AZO films is dominated by the Burstein Moss effect. The Fermi level for an 807 nm thick AZO film rose by some 0.16 eV with respect to the edge of the conduction band. By controlling the film thickness, all AZO films exhibit the same lattice strain values. The influence of strain-induced bandgap shift was excluded by se...

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Publication status:
Published

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Publisher copy:
10.1063/1.4759208

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Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
Role:
Author
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Journal:
JOURNAL OF APPLIED PHYSICS
Volume:
112
Issue:
8
Pages:
083708-083708
Publication date:
2012-10-15
DOI:
ISSN:
0021-8979
URN:
uuid:21043dcf-53ea-4bac-bbfb-14803439c207
Source identifiers:
364403
Local pid:
pubs:364403
Language:
English

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