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Dislocation locking by nitrogen impurities in FZ-silicon

Abstract:

The locking of dislocations by nitrogen impurities in nitrogen-doped FZ-grown (NFZ) silicon crystals was investigated as a function of time in the temperature range 550-830degreesC. It was found that nitrogen impurities induce a strong locking effect on stationary dislocations after a sufficiently long anneal. The locking is similar in magnitude to that observed for oxygen atoms in Czochralski-grown crystals (Cz), although the nitrogen concentration in the NFZ samples (2.2 x 10(15) cm(-3)) is...

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Publication status:
Published

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Publisher copy:
10.1016/j.physb.2003.09.191

Authors


Giannattasio, A More by this author
Senkader, S More by this author
Falster, RJ More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Volume:
340
Pages:
996-1000
Publication date:
2003-12-31
DOI:
ISSN:
0921-4526
URN:
uuid:1f9aab70-105e-41b0-b27d-69c9481deaf9
Source identifiers:
19606
Local pid:
pubs:19606

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