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High resolution measurements of strain and tilt distributions in SiGe mesas using electron backscatter diffraction

Abstract:

Electron backscatter diffraction allows the elastic strain and rotation tensors to be determined at high spatial resolution and with a strain sensitivity of ~10-4. The technique is used to investigate variations of strains and rotations near the surface of 200 nm thick epitaxial layers of Si0.85Ge0.15 grown on a Si substrate patterned with mesa stripes. In wide mesa stripes the strain relaxation and lattice curvature are confined to the outer edges of the mesa. While in narrower mesas the rel...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1063/1.2403904

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Institution:
University of Oxford
Department:
Mathematical,Physical & Life Sciences Division - Materials
Publisher:
American Institute of Physics Publisher's website
Journal:
Applied Physics Letters Journal website
Volume:
89
Issue:
24
Pages:
241910
Publication date:
2006-12-05
DOI:
EISSN:
1077-3118
ISSN:
0003-6951
URN:
uuid:1f17b8df-9c25-418b-96dc-e34e0f2dda94
Local pid:
ora:1428

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