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The effect of oxide precipitates on minority carrier lifetime in p-type silicon

Abstract:

Transient and quasi-steady-state photoconductance methods were used to measure minority carrier lifetime in ∼10 cm p-type Czochralski silicon processed in very clean conditions to contain oxide precipitates. The nucleation and growth times for precipitation were varied to produce 35 samples, which were then characterised by chemical etching and transmission electron microscopy to determine the density and morphology of the precipitates. The effects of other known recombination mechanisms (ban...

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Publication status:
Published

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Publisher copy:
10.1063/1.3632067

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Journal:
JOURNAL OF APPLIED PHYSICS
Volume:
110
Issue:
5
Pages:
053713-053713
Publication date:
2011-09-01
DOI:
ISSN:
0021-8979
Source identifiers:
186207
Language:
English
Pubs id:
pubs:186207
UUID:
uuid:1e9273ae-a3f1-4b06-a6bc-aa0fde05ebe0
Local pid:
pubs:186207
Deposit date:
2012-12-19

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