- Abstract:
-
Transient and quasi-steady-state photoconductance methods were used to measure minority carrier lifetime in ∼10 cm p-type Czochralski silicon processed in very clean conditions to contain oxide precipitates. The nucleation and growth times for precipitation were varied to produce 35 samples, which were then characterised by chemical etching and transmission electron microscopy to determine the density and morphology of the precipitates. The effects of other known recombination mechanisms (ban...
Expand abstract - Publication status:
- Published
- Publisher copy:
- 10.1063/1.3632067
-
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- Journal:
- JOURNAL OF APPLIED PHYSICS
- Volume:
- 110
- Issue:
- 5
- Pages:
- 053713-053713
- Publication date:
- 2011-09-01
- DOI:
- ISSN:
-
0021-8979
- URN:
-
uuid:1e9273ae-a3f1-4b06-a6bc-aa0fde05ebe0
- Source identifiers:
-
186207
- Local pid:
- pubs:186207
- Language:
- English
- Copyright date:
- 2011
Journal article
The effect of oxide precipitates on minority carrier lifetime in p-type silicon
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