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QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON

Abstract:
Deformation induced dislocations in silicon have been found to exhibit different degrees of electrical activity dependent upon whether they were deformed at 420°C or 650°C. Furthermore the effects of copper decoration are also found to vary between dislocations produced at these temperatures. Quantitative analysis of EBIC measurements in terms of the charge at dislocations reveals this behaviour to be due to different defect states.
Publication status:
Published

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Publisher:
Publ by Inst of Physics Publ Ltd
Journal:
INSTITUTE OF PHYSICS CONFERENCE SERIES
Issue:
117
Pages:
733-736
Publication date:
1991-01-01
ISSN:
0951-3248
Source identifiers:
7342
Language:
English
Pubs id:
pubs:7342
UUID:
uuid:1e4f96fb-fa4f-43cd-a048-9a0b09f63dbc
Local pid:
pubs:7342
Deposit date:
2012-12-19

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