Journal article icon

Journal article

One dimensional transport in silicon nanowire junction-less field effect transistors

Abstract:

Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D electronic transport characteristics. The 1D regime allows excellent gate modulation with near ideal subthreshold slopes, on- to off-current ratios above 108 and high on-currents at room temperature. Universal conductance scaling as a function of...

Expand abstract
Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

Actions


Access Document


Files:
Publisher copy:
10.1038/s41598-017-03138-5

Authors


More by this author
Department:
Oxford, MPLS, Materials
More by this author
Department:
Oxford, MPLS, Materials
MacLaren, DA More by this author
More by this author
Department:
Oxford, MPLS, Materials
Expand authors...
More from this funder
Funding agency for:
Schupp, FJ
Publisher:
Nature Publishing Group Publisher's website
Journal:
Scientific Reports Journal website
Volume:
7
Issue:
3004
Pages:
1-8
Publication date:
2017-06-07
Acceptance date:
2017-04-25
DOI:
EISSN:
2045-2322
ISSN:
2045-2322
Pubs id:
pubs:700581
URN:
uri:15bc7057-5992-41cf-b91c-2abc4ee40920
UUID:
uuid:15bc7057-5992-41cf-b91c-2abc4ee40920
Local pid:
pubs:700581
Language:
English
Keywords:

Terms of use


Metrics



If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP