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Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by N-electrodes

Abstract:

We demonstrate the development, performance and application of a novel GaN-based micro-light emitting diode (μLED) array sharing a common p-electrode (anode), and with individually addressable n-electrodes (cathodes). Compared to conventional GaN-based LED arrays, this array design employs a reversed structure of common and individual electrodes, which makes it compatible with n-type metal-oxide-semiconductor (NMOS) transistor-based drivers for faster modulation. Excellent performance charact...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1109/JPHOT.2017.2768478

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Publisher:
IEEE Publisher's website
Journal:
IEEE Photonics Journal Journal website
Volume:
9
Issue:
6
Article number:
7907811
Publication date:
2017-11-01
Acceptance date:
2017-11-01
DOI:
EISSN:
1943-0655
Source identifiers:
742551
Keywords:
Pubs id:
pubs:742551
UUID:
uuid:12ae2ea2-df02-46b7-bd71-1086efc66bf0
Local pid:
pubs:742551
Deposit date:
2017-11-03

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