Conference item
Hydrogen related defects in float zone silicon investigated using a shielded hydrogen plasma
- Abstract:
- Shielded Hydrogen Passivation (SHP) has been shown to be an effective technique to introduce atomic hydrogen to silicon samples. This allows the study of hydrogen related defects at a range of temperatures without any UV or other process damage. It is found that at 350°C, introduction of atomic hydrogen can cause near surface damage into n-type material that greatly reduces carrier lifetime. In contrast, p-type samples showed no initial degradation, followed by signs of degradation under hot light soaking.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
Actions
Authors
Funding
+ Engineering and Physical Sciences Research Council
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Grant:
International
theSupersiliconproject(EP/M024911/1
IndustrialEngagementFund
Bibliographic Details
- Publisher:
- IEEE Publisher's website
- Journal:
- 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC) Journal website
- Pages:
- 0298-0302
- Host title:
- 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC)
- Publication date:
- 2018-11-29
- Acceptance date:
- 2018-03-16
- Event start date:
- 2018-06-10T00:00:00Z
- Event end date:
- 2018-06-15T00:00:00Z
- DOI:
- ISSN:
-
0160-8371
- Source identifiers:
-
958825
- ISBN:
- 9781538685297
Item Description
- Keywords:
- Pubs id:
-
pubs:958825
- UUID:
-
uuid:0a936621-ce65-4f49-b0cb-0aa54b447a36
- Local pid:
- pubs:958825
- Deposit date:
- 2019-01-10
Terms of use
- Copyright holder:
- IEEE
- Copyright date:
- 2018
- Notes:
- Copyright © 2018 IEEE.
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