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Very low surface recombination velocity in n-type c-Si using extrinsic field effect passivation

Abstract:

In this article, field-effect surface passivation is characterised as either intrinsic or extrinsic, depending on the origin of the charges present in passivation dielectric layers. The surface recombination velocity of float zone, 1 Ω cm, n-type silicon was reduced to 0.15cm/s, the lowest ever observed for a passivating double layer consisting of thermally grown silicon dioxide and plasma enhanced chemical vapour deposited silicon nitride. This result was obtained by enhancing the intrinsic ...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1063/1.4892099

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics More from this journal
Volume:
116
Issue:
5
Article number:
054102
Publication date:
2014-08-01
DOI:
EISSN:
1089-7550
ISSN:
0021-8979
Language:
English
Keywords:
Pubs id:
485536
Local pid:
pubs:485536
Deposit date:
2020-03-18

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