Journal article
Very low surface recombination velocity in n-type c-Si using extrinsic field effect passivation
- Abstract:
-
In this article, field-effect surface passivation is characterised as either intrinsic or extrinsic, depending on the origin of the charges present in passivation dielectric layers. The surface recombination velocity of float zone, 1 Ω cm, n-type silicon was reduced to 0.15cm/s, the lowest ever observed for a passivating double layer consisting of thermally grown silicon dioxide and plasma enhanced chemical vapour deposited silicon nitride. This result was obtained by enhancing the intrinsic ...
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- Publication status:
- Published
- Peer review status:
- Peer reviewed
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Authors
Bibliographic Details
- Publisher:
- AIP Publishing Publisher's website
- Journal:
- Journal of Applied Physics Journal website
- Volume:
- 116
- Issue:
- 5
- Article number:
- 054102
- Publication date:
- 2014-08-01
- DOI:
- EISSN:
-
1089-7550
- ISSN:
-
0021-8979
Item Description
- Language:
- English
- Keywords:
- Pubs id:
-
485536
- Local pid:
- pubs:485536
- Deposit date:
- 2020-03-18
Terms of use
- Copyright date:
- 2014
- Notes:
- This is the accepted manuscript version of the article. The publisher's version is available online
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