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Journal article

Annealing effects on the microstructure of Ge/Si(001) quantum dots

Abstract:

Ge/Si(001) multilayer islands produced by gas-source molecular-beam epitaxy at 575 °C were investigated using energy-filtering transmission electron microscopy. Results show, for as-grown samples, not only a continuous enlargement of island size in upper layers but also a continuous increase of Ge concentration within islands in upper layers. As a result of the increasing island size and Ge concentration within the islands, the island density in upper layers decreases. For samples annealed at...

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Publication status:
Published

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Publisher copy:
10.1063/1.1398615

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Journal:
APPLIED PHYSICS LETTERS
Volume:
79
Issue:
9
Pages:
1258-1260
Publication date:
2001-08-27
DOI:
ISSN:
0003-6951
URN:
uuid:01b2b81d-82bd-410d-9a06-a72ae4c5a4b3
Source identifiers:
30510
Local pid:
pubs:30510
Language:
English

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