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Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6

Publication status:
Published

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Volume:
360
Pages:
245-252
Publication date:
1997-01-01
ISSN:
0258-1221
URN:
uuid:01666c63-00a8-472a-ab75-9e3eda9d4358
Source identifiers:
174569
Local pid:
pubs:174569
ISBN:
0-306-45613-3

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