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Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6

Publication status:: Published

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APA Style

Owen, J., Miki, K., Bowler, D., Briggs, G., & Goldfarb, I. (1997). Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6. 360, 245–252.

MLA Style

Owen, J, et al. “Elevated-Temperature STM Study of Ge and Si Growth on Si(001) from GeH4 and Si2H6.” vol. 360, 1997, pp. 245–52.

Chicago Style

Owen, J, K Miki, D Bowler, G Briggs, and I Goldfarb. 1997. “Elevated-Temperature STM Study of Ge and Si Growth on Si(001) from GeH4 and Si2H6.” 360: 245–52.
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Publisher copy:: 10.1007/978-1-4899-0262-7_22

Authors

+ Owen, J More by this author

Role:: Author

+ Miki, K More by this author

Role:: Author

+ Bowler, D More by this author

Role:: Author

+ Briggs, G More by this author

Role:: Author

+ Goldfarb, I More by this author

Role:: Author

Host title:: SURFACE DIFFUSION
Volume:: 360
Pages:: 245-252
Publication date:: 1997-01-01
DOI:: 10.1007/978-1-4899-0262-7_22
ISSN:: 0258-1221
ISBN:: 0306456133

Pubs id:: pubs:174569
UUID:: uuid:01666c63-00a8-472a-ab75-9e3eda9d4358
Local pid:: pubs:174569
Source identifiers:: 174569
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_01666c6300a8472aab759e3eda9d4358

Terms of use

Copyright date:: 1997

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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