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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

  • Murphy, J, Senkader, S, Falster, R, et al.
  • 2006-10-15
2
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Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations

  • Alpass, C, Murphy, J, Falster, R, et al.
  • 2009-03-15
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