The properties of nitrogen and oxygen in silicon

Thesis

A novel dislocation locking technique is used to study the behaviour of nitrogen and oxygen in silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen or oxygen diffuses to the dislocations. The stress required to move the dislocations away from the impurities is then measured. Measurement of this unlocking stress as a function of annealing time and temperature allows information on the trans...

Expand abstract

Authors: Murphy, J; John Douglas Murphy

• Publication date: 2006
• Type of award: DPhil
• Level of award: Doctoral
• Awarding institution: University of Oxford
• Language: English
• Keywords: deep-level; silicon; DLTS; nitrogen; oxygen; boron; electrical activity; float-zone; dislocation; locking; doping; transport; Czochralski; antimony; diffusion
• Subjects: Silicon