Defect characterisation in multi-crystalline silicon

Thesis

Electron beam induced current (EBIC) and atom probe tomography (APT) were used in this study to determine electrical activities and impurity compositions at extended defects in multicrystalline silicon (mc-Si) samples. The results provide, for the first time, information regarding the chemical species present at defects whose electrical activity has previously been measured.

A new APT specimen fabrication process was developed with the ability to select a specific defect for APT ana...

Expand abstract

Authors: Lotharukpong, C

• Publication date: 2015
• DOI: 10.5287/ora-zo9qnvvkp
• Type of award: DPhil
• Level of award: Doctoral
• Awarding institution: Oxford University, UK
• Language: English
• Keywords: Atom probe tomography; Atom probe; grain boundaries; multi-crystalline silicon; extended defects; dislocations
• Subjects: Microscopy and microanalysis; Field Ion Microscopy; Semiconductors; Semiconductor devices; Silicon