Thesis
Microstructural characterization of heteroepitaxial layers of III-V compound semiconductors
- Abstract:
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This work describes results obtained from TEM, TED and HREM studies of MBE and MOCVD InASySb1-y, MOCVD InxGa1-xAs, MOCVD InPySb1-y and MOCVD GaPySb1-y layers which were grown over a wide range of conditions. These semiconductor layers are of considerable importance for a variety of applications in optoelectronic and...
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- Publication date:
- 1991
- Type of award:
- DPhil
- Level of award:
- Doctoral
- Awarding institution:
- University of Oxford
- Language:
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English
- Subjects:
- UUID:
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uuid:77ce3d0d-dc9b-45ab-af6b-eeb66785b2e5
- Local pid:
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td:603840767
- Source identifiers:
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603840767
- Deposit date:
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2014-07-22
Terms of use
- Copyright holder:
- Seong, Tae-Yeon
- Copyright date:
- 1991
- Notes:
- This thesis was digitised thanks to the generosity of Dr Leonard Polonsky
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