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Thesis

Microstructural characterization of heteroepitaxial layers of III-V compound semiconductors

Abstract:

This work describes results obtained from TEM, TED and HREM studies of MBE and MOCVD InASySb1-y, MOCVD InxGa1-xAs, MOCVD InPySb1-y and MOCVD GaPySb1-y layers which were grown over a wide range of conditions. These semiconductor layers are of considerable importance for a variety of applications in optoelectronic and...

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Institution:
University of Oxford
Division:
MPLS
Role:
Author

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Role:
Supervisor
Role:
Supervisor


Publication date:
1991
Type of award:
DPhil
Level of award:
Doctoral
Awarding institution:
University of Oxford


Language:
English
Subjects:
UUID:
uuid:77ce3d0d-dc9b-45ab-af6b-eeb66785b2e5
Local pid:
td:603840767
Source identifiers:
603840767
Deposit date:
2014-07-22

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