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Magneto-optics of InAs/GaSb heterostructures

Abstract:

The optical properties of InAs/GaSb heterostructures under applied magnetic fields are studied in experimental and theoretical detail. The InAs/GaSb system is a type-II "crossed-gap" system, where the valence band edge of GaSb lies higher in energy than the conduction band edge of InAs. This leads to a region of energy above the InAs conduction band where conduction and hole states mix. Thin-layer superlattices remain semiconducting due to confinement effects, but thick-layer superlattice...

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Institution:
University of Oxford
Division:
MPLS
Role:
Author

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Role:
Supervisor
Role:
Supervisor


Publication date:
1995
DOI:
Type of award:
DPhil
Level of award:
Doctoral
Awarding institution:
University of Oxford


Language:
English
Subjects:
UUID:
uuid:52b3d4c8-04f2-4ee8-b5a5-382934807722
Local pid:
td:602801761
Source identifiers:
602801761
Deposit date:
2014-04-01

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